
Parameter | Value |
---|---|
Gate Charge | 57 nC |
Gate to Source Threshold Voltage | 3 V to 5 V |
Continuous Drain Current (ID) | 20 A |
Max Operating Temperature | 150 °C |
Min Operating Temperature | -55 °C |
Drain to Source Resistance | 400 mΩ |
Input capacitance | 5.15 nF |
Gate to Source Voltage (Vgs) | -30 V, 30 V |
Power Dissipation | 80 W |
Drain to Source Breakdown Voltage (Vds) | 650 V |
Number of Channels | 1 |
Packaging | Tube |
RoHS | Compliant |
FET Type(Transistor Polarity) | N-Channel |
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